Silicon nitride gate dielectrics and band gap engineering in graphene layers

Wenjuan Zhu, Deborah Neumayer, Vasili Perebeinos, Phaedon Avouris

Research output: Contribution to journalArticlepeer-review

Abstract

We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers.

Original languageEnglish (US)
Pages (from-to)3572-3576
Number of pages5
JournalNano letters
Volume10
Issue number9
DOIs
StatePublished - Sep 8 2010
Externally publishedYes

Keywords

  • Graphene
  • PECVD
  • band gap
  • band overlap
  • mobility
  • silicon nitride

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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