Silicon nanowire active integrated optics

R. M. Osgood, R. L. Espinola, J. I. Dadap, S. J. McNab, Y. A. Vlasov

Research output: Contribution to journalConference articlepeer-review

Abstract

We employ ultranarrow silicon-on-insulator (SOI) waveguides to demonstrate significant Raman gain using low CW pump powers from a diode laser. Starting with measurements based on spontaneous Raman scattering in nanowire SOI waveguides, we obtain the parameters necessary to develop a useful numerical modeling tool for our system. This work shows clearly the feasibility of an SOI-based low-loss, low-power, on-chip Raman amplifier in the silicon nanowire system. We have also developed a rigorous coupled wave model to examine temporal effects in our Raman system.

Original languageEnglish (US)
Article number13
Pages (from-to)110-117
Number of pages8
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5729
DOIs
StatePublished - Jul 21 2005
Externally publishedYes
EventOptoelectronic Integrated Circuits VII - San Jose, CA, United States
Duration: Jan 25 2005Jan 27 2005

Keywords

  • Four-wave mixing
  • Integrated optics
  • Raman amplifier
  • Silicon-on-insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Biomaterials
  • Radiology Nuclear Medicine and imaging

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