Silicon nanofabrication and chemical modification by UHV-STM

Joseph W Lyding, T. C. Shen, G. C. Abeln, C. Wang, E. T. Foley, J. R. Tucker

Research output: Contribution to journalArticle

Abstract

Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

Original languageEnglish (US)
Pages (from-to)187-197
Number of pages11
JournalMaterials Research Society Symposium - Proceedings
Volume380
StatePublished - 1995

Fingerprint

nanofabrication
Chemical modification
Silicon
Nanotechnology
Hydrogen
silicon
hydrogen
desorption
Desorption
Thermal desorption
Nitridation
Electrons
Passivation
Field emission
passivity
field emission
Monolayers
electrons
chemistry
Oxidation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lyding, J. W., Shen, T. C., Abeln, G. C., Wang, C., Foley, E. T., & Tucker, J. R. (1995). Silicon nanofabrication and chemical modification by UHV-STM. Materials Research Society Symposium - Proceedings, 380, 187-197.

Silicon nanofabrication and chemical modification by UHV-STM. / Lyding, Joseph W; Shen, T. C.; Abeln, G. C.; Wang, C.; Foley, E. T.; Tucker, J. R.

In: Materials Research Society Symposium - Proceedings, Vol. 380, 1995, p. 187-197.

Research output: Contribution to journalArticle

Lyding, JW, Shen, TC, Abeln, GC, Wang, C, Foley, ET & Tucker, JR 1995, 'Silicon nanofabrication and chemical modification by UHV-STM', Materials Research Society Symposium - Proceedings, vol. 380, pp. 187-197.
Lyding, Joseph W ; Shen, T. C. ; Abeln, G. C. ; Wang, C. ; Foley, E. T. ; Tucker, J. R. / Silicon nanofabrication and chemical modification by UHV-STM. In: Materials Research Society Symposium - Proceedings. 1995 ; Vol. 380. pp. 187-197.
@article{abf748d1ccea4a10b69e7a46b55e8eb4,
title = "Silicon nanofabrication and chemical modification by UHV-STM",
abstract = "Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.",
author = "Lyding, {Joseph W} and Shen, {T. C.} and Abeln, {G. C.} and C. Wang and Foley, {E. T.} and Tucker, {J. R.}",
year = "1995",
language = "English (US)",
volume = "380",
pages = "187--197",
journal = "Materials Research Society Symposium Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Silicon nanofabrication and chemical modification by UHV-STM

AU - Lyding, Joseph W

AU - Shen, T. C.

AU - Abeln, G. C.

AU - Wang, C.

AU - Foley, E. T.

AU - Tucker, J. R.

PY - 1995

Y1 - 1995

N2 - Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

AB - Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0029541581&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029541581&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0029541581

VL - 380

SP - 187

EP - 197

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

ER -