Silicon nanofabrication and chemical modification by UHV-STM

Joseph W Lyding, T. C. Shen, G. C. Abeln, C. Wang, E. T. Foley, J. R. Tucker

Research output: Contribution to journalArticle


Patterning on the 10 angstrom size scale has been achieved with a UHV-STM for Si(100)-2×1:H surfaces. Hydrogen passivation serves as a monolayer resist which the STM locally desorbs, exposing clean Si(100)-2×1 for selective chemistry. Two mechanisms have been identified for hydrogen removal by STM electrons: in the field emission regime direct electron stimulated desorption of hydrogen occurs whereas, in the lower energy tunneling regime, hydrogen desorption results from vibrational excitation of the Si-H bond at high tunneling currents. Furthermore, we find that atomic hydrogen is liberated in contrast to molecular hydrogen evolved during thermal desorption. Selective oxidation and nitridation of the STM-patterned areas has been achieved.

Original languageEnglish (US)
Pages (from-to)187-197
Number of pages11
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Silicon nanofabrication and chemical modification by UHV-STM'. Together they form a unique fingerprint.

Cite this