Super low-noise GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1·3 dB, with an associated gain of 10·3 dB and a maximum available gain of 14·9 dB.
- Field-effect transistors
- Ion implantation
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering