Silicon implanted super low-noise GaAs MESFET

M. Feng, V. K. Eu, M. Siracusa, E. Watkins, H. Kimura, H. Winston

Research output: Contribution to journalArticle

Abstract

Super low-noise GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1·3 dB, with an associated gain of 10·3 dB and a maximum available gain of 14·9 dB.

Original languageEnglish (US)
Pages (from-to)21-23
Number of pages3
JournalElectronics Letters
Volume18
Issue number1
DOIs
StatePublished - Jan 7 1982
Externally publishedYes

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Keywords

  • Field-effect transistors
  • Ion implantation
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Feng, M., Eu, V. K., Siracusa, M., Watkins, E., Kimura, H., & Winston, H. (1982). Silicon implanted super low-noise GaAs MESFET. Electronics Letters, 18(1), 21-23. https://doi.org/10.1049/el:19820016