Silicon field-effect transistor based on quantum tunneling

J. R. Tucker, Chinlee Wang, P. Scott Carney

Research output: Contribution to journalArticlepeer-review


This letter explores regulation of current flow within a silicon field-effect transistor by gate-induced tunneling through a Schottky barrier located at the interface between a metallic source electrode and the Si channel. The goal here is to forestall short-channel effects which are expected to prevent further size reductions in conventional devices when linewidths reach ∼1000 Å. Control of tunneling appears to be possible at minimum channel lengths L∼250 Å or less while simultaneously eliminating the need for large-area source and drain contacts, so that scaling of Si transistors could be significantly extended if this principle proves technically feasible.

Original languageEnglish (US)
Pages (from-to)618-620
Number of pages3
JournalApplied Physics Letters
Issue number5
StatePublished - 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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