Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions

Elyse Rosenbaum, Zhihong Liu, Chenming Hu

Research output: Contribution to journalArticle

Abstract

Time to breakdown (tBD) of silicon dioxide has a pronounced frequency dependence when it is measured under bipolar bias conditions. At high frequencies, bipolar tBD can be enhanced by two orders of magnitude over the tBD obtained using dc or unipolar pulse bias of the same frequency and electric field. The lifetime improvement is attributed to detrapping of holes. At high frequencies, the improvement is maximum because the trapped holes are concentrated at the interface where they can easily be removed upon field reversal. At low frequencies, the improvement is less because the trapped hole distribution extends further into the oxide. Two different mechanisms are proposed to explain the frequency dependent spreading of the trapped hole distribution away from the interface.

Original languageEnglish (US)
Pages (from-to)2287-2295
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume40
Issue number12
DOIs
StatePublished - Dec 1993

Fingerprint

Silicon Dioxide
hole distribution
Oxides
breakdown
Silica
Electric fields
silicon dioxide
life (durability)
augmentation
low frequencies
oxides
electric fields
pulses

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Silicon Dioxide Breakdown Lifetime Enhancement Under Bipolar Bias Conditions. / Rosenbaum, Elyse; Liu, Zhihong; Hu, Chenming.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 12, 12.1993, p. 2287-2295.

Research output: Contribution to journalArticle

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