Silicon carbide Schottky diodes for alpha particle detection

M. Piotto, P. Bruschi, A. Diligenti, R. Ciolini, G. Curzio, A. Di Fulvio

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.

Original languageEnglish (US)
Title of host publicationSensors and Microsystems - AISEM 2010 Proceedings
Pages187-191
Number of pages5
DOIs
StatePublished - Sep 8 2011
Externally publishedYes
Event15th Italian Conference on Sensors and Microsystems, AISEM 2010 - Messina, Italy
Duration: Feb 8 2010Feb 10 2010

Publication series

NameLecture Notes in Electrical Engineering
Volume91 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

Other15th Italian Conference on Sensors and Microsystems, AISEM 2010
CountryItaly
CityMessina
Period2/8/102/10/10

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering

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