SiH4 on TiSi2: an investigation of gas adsorption on metal-like compounds

R. P. Southwell, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

Although titanium disilicide is composed mostly of a nonmetallic element, its electrical conductivity is metal-like. The question therefore arises as to whether the reactivity of TiSi2 toward gases resembles metals, nonmetals, or some admixture. To investigate this question, the adsorption/desorption kinetics of SiH4 on polycrystalline TiSi2 were measured by temperature programmed desorption. SiH4 interacts strongly with the surface, and only H2 is observed as a desorption product near 300 K. The kinetics shift from second to first order as the coverage increases above 0.07. There is a crudely Gaussian distribution of desorption energies centered near 19 ± 2 kcal/mol, with a full width at half maximum near 9 kcal/mol. In these and other respects, the behavior of TiSi2 toward SiH4 and H2 mirrors that of typical metals. Coadsorption studies with TiCl4 further support this conclusion and also give insights into the chemical vapor deposition of TiSi2 from these two source gases.

Original languageEnglish (US)
Pages (from-to)107-114
Number of pages8
JournalSurface Science
Volume329
Issue number1-2
DOIs
StatePublished - May 10 1995

Keywords

  • Adsorption kinetics
  • Chemical vapor deposition
  • Chemisorption
  • Silane
  • Thermal desorption
  • Thermal desorption spectroscopy
  • Titanium silicide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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