Signature of a topological phase transition in the Josephson supercurrent through a topological insulator

M. P. Stehno, V. Orlyanchik, C. D. Nugroho, P. Ghaemi, M. Brahlek, N. Koirala, S. Oh, D. J. Van Harlingen

Research output: Contribution to journalArticle

Abstract

Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.

Original languageEnglish (US)
Article number035307
JournalPhysical Review B
Volume93
Issue number3
DOIs
StatePublished - Jan 19 2016

Fingerprint

Phase transitions
signatures
insulators
Band structure
Josephson junctions
Quantum computers
relocation
Relocation
Critical currents
quantum computation
Electrostatics
critical current
depletion
topology
Physics
Doping (additives)
Topology
inversions
electrostatics
solid state

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Signature of a topological phase transition in the Josephson supercurrent through a topological insulator. / Stehno, M. P.; Orlyanchik, V.; Nugroho, C. D.; Ghaemi, P.; Brahlek, M.; Koirala, N.; Oh, S.; Van Harlingen, D. J.

In: Physical Review B, Vol. 93, No. 3, 035307, 19.01.2016.

Research output: Contribution to journalArticle

Stehno, M. P. ; Orlyanchik, V. ; Nugroho, C. D. ; Ghaemi, P. ; Brahlek, M. ; Koirala, N. ; Oh, S. ; Van Harlingen, D. J. / Signature of a topological phase transition in the Josephson supercurrent through a topological insulator. In: Physical Review B. 2016 ; Vol. 93, No. 3.
@article{ef765bfe5534412c9c4391bdbb9f4f35,
title = "Signature of a topological phase transition in the Josephson supercurrent through a topological insulator",
abstract = "Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.",
author = "Stehno, {M. P.} and V. Orlyanchik and Nugroho, {C. D.} and P. Ghaemi and M. Brahlek and N. Koirala and S. Oh and {Van Harlingen}, {D. J.}",
year = "2016",
month = "1",
day = "19",
doi = "10.1103/PhysRevB.93.035307",
language = "English (US)",
volume = "93",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "3",

}

TY - JOUR

T1 - Signature of a topological phase transition in the Josephson supercurrent through a topological insulator

AU - Stehno, M. P.

AU - Orlyanchik, V.

AU - Nugroho, C. D.

AU - Ghaemi, P.

AU - Brahlek, M.

AU - Koirala, N.

AU - Oh, S.

AU - Van Harlingen, D. J.

PY - 2016/1/19

Y1 - 2016/1/19

N2 - Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.

AB - Topological insulators (TIs) hold great promise for topological quantum computation in solid-state systems. Recently, several groups reported experimental data suggesting that signatures of Majorana modes have been observed in topological insulator Josephson junctions (TIJJs). A prerequisite for the exploration of Majorana physics is to obtain a good understanding of the properties of low-energy Andreev bound states (ABSs) in a material with a topologically nontrivial band structure. Here, we present experimental data and a theoretical analysis demonstrating that the band-structure inversion close to the surface of a TI has observable consequences for supercurrent transport in TIJJs prepared on surface-doped Bi2Se3 thin films. Electrostatic carrier depletion of the film surface leads to an abrupt drop in the critical current of such devices. The effect can be understood as a relocation of low-energy ABSs from a region deeper in the bulk of the material to the more strongly disordered surface, which is driven by the topology of the effective band structure in the presence of surface dopants.

UR - http://www.scopus.com/inward/record.url?scp=84955239371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84955239371&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.93.035307

DO - 10.1103/PhysRevB.93.035307

M3 - Article

AN - SCOPUS:84955239371

VL - 93

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 3

M1 - 035307

ER -