A single-emitter multiple-input transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the transistor I-V characteristics (Β≡Δ IC Δ IB, Βspon > Βstim), input signals f1 =2 GHz and f2 =2.1 GHz are converted into m f1 ±n f2 ranging from 0.1 to 8.4 GHz. Stimulated emission (enhanced recombination) changes the transistor into a special form of nonlinear element, a special form of electronic processor or "switch."
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)