Signal mixing in a multiple input transistor laser near threshold

M. Feng, N. Holonyak, R. Chan, A. James, G. Walter

Research output: Contribution to journalArticlepeer-review

Abstract

A single-emitter multiple-input transistor laser has been realized and demonstrated in signal mixing, yielding in the stimulated-recombination region near laser threshold frequency conversion with simultaneously an electrical and optical output signal. In the unique nonlinear region of compression of the transistor I-V characteristics (Β≡Δ IC Δ IB, Βspon > Βstim), input signals f1 =2 GHz and f2 =2.1 GHz are converted into m f1 ±n f2 ranging from 0.1 to 8.4 GHz. Stimulated emission (enhanced recombination) changes the transistor into a special form of nonlinear element, a special form of electronic processor or "switch."

Original languageEnglish (US)
Article number063509
JournalApplied Physics Letters
Volume88
Issue number6
DOIs
StatePublished - Feb 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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