SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation

Z. Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D. A. Antoniadis, E. A. Fitzgerald

Research output: Contribution to conferencePaper

Abstract

The silicon-germanium on insulator (SGOI) substrates were fabricated by using etch-back and smart-cut approaches. The fabrication of strained-Si nMOSFET was demonstrated and the electron mobility enhancement was also evaluated. Results of etch pit density (EPD) experiment showed no visible misfit dislocation between the top Si film and the relaxed SiGe layer. The charge density and interface charge density in the control LTO/Si structure were observed to be 2.4×1011 /cm2 and 5×1010 /cm2 eV.

Original languageEnglish (US)
Pages13-14
Number of pages2
StatePublished - Jan 1 2001
Externally publishedYes
Event2001 IEEE International SOI Conference - Durango, CO, United States
Duration: Oct 1 2001Oct 4 2001

Other

Other2001 IEEE International SOI Conference
CountryUnited States
CityDurango, CO
Period10/1/0110/4/01

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Cheng, Z. Y., Currie, M. T., Leitz, C. W., Taraschi, G., Pitera, A., Lee, M. L., Langdo, T. A., Hoyt, J. L., Antoniadis, D. A., & Fitzgerald, E. A. (2001). SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation. 13-14. Paper presented at 2001 IEEE International SOI Conference, Durango, CO, United States.