SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation

Z. Y. Cheng; M. T. Currie; C. W. Leitz; G. Taraschi; A. Pitera; M. L. Lee; T. A. Langdo; J. L. Hoyt; D. A. Antoniadis; E. A. Fitzgerald

SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation

Z. Y. Cheng, M. T. Currie, C. W. Leitz, G. Taraschi, A. Pitera, M. L. Lee, T. A. Langdo, J. L. Hoyt, D. A. Antoniadis, E. A. Fitzgerald

Research output: Contribution to conference › Paper › peer-review

Abstract

The silicon-germanium on insulator (SGOI) substrates were fabricated by using etch-back and smart-cut approaches. The fabrication of strained-Si nMOSFET was demonstrated and the electron mobility enhancement was also evaluated. Results of etch pit density (EPD) experiment showed no visible misfit dislocation between the top Si film and the relaxed SiGe layer. The charge density and interface charge density in the control LTO/Si structure were observed to be 2.4×10¹¹ /cm² and 5×10¹⁰ /cm² eV.

Original language	English (US)
Pages	13-14
Number of pages	2
State	Published - 2001
Externally published	Yes
Event	2001 IEEE International SOI Conference - Durango, CO, United States Duration: Oct 1 2001 → Oct 4 2001

Other

Other	2001 IEEE International SOI Conference
Country/Territory	United States
City	Durango, CO
Period	10/1/01 → 10/4/01

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@conference{d6cd07fbe1214d6f9aadff0da489ae8f,

title = "SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation",

abstract = "The silicon-germanium on insulator (SGOI) substrates were fabricated by using etch-back and smart-cut approaches. The fabrication of strained-Si nMOSFET was demonstrated and the electron mobility enhancement was also evaluated. Results of etch pit density (EPD) experiment showed no visible misfit dislocation between the top Si film and the relaxed SiGe layer. The charge density and interface charge density in the control LTO/Si structure were observed to be 2.4×1011 /cm2 and 5×1010 /cm2 eV.",

author = "Cheng, {Z. Y.} and Currie, {M. T.} and Leitz, {C. W.} and G. Taraschi and A. Pitera and Lee, {M. L.} and Langdo, {T. A.} and Hoyt, {J. L.} and Antoniadis, {D. A.} and Fitzgerald, {E. A.}",

year = "2001",

language = "English (US)",

pages = "13--14",

note = "2001 IEEE International SOI Conference ; Conference date: 01-10-2001 Through 04-10-2001",

}

TY - CONF

T1 - SiGe-on-insulator (SGOI)

T2 - 2001 IEEE International SOI Conference

AU - Cheng, Z. Y.

AU - Currie, M. T.

AU - Leitz, C. W.

AU - Taraschi, G.

AU - Pitera, A.

AU - Lee, M. L.

AU - Langdo, T. A.

AU - Hoyt, J. L.

AU - Antoniadis, D. A.

AU - Fitzgerald, E. A.

PY - 2001

Y1 - 2001

N2 - The silicon-germanium on insulator (SGOI) substrates were fabricated by using etch-back and smart-cut approaches. The fabrication of strained-Si nMOSFET was demonstrated and the electron mobility enhancement was also evaluated. Results of etch pit density (EPD) experiment showed no visible misfit dislocation between the top Si film and the relaxed SiGe layer. The charge density and interface charge density in the control LTO/Si structure were observed to be 2.4×1011 /cm2 and 5×1010 /cm2 eV.

AB - The silicon-germanium on insulator (SGOI) substrates were fabricated by using etch-back and smart-cut approaches. The fabrication of strained-Si nMOSFET was demonstrated and the electron mobility enhancement was also evaluated. Results of etch pit density (EPD) experiment showed no visible misfit dislocation between the top Si film and the relaxed SiGe layer. The charge density and interface charge density in the control LTO/Si structure were observed to be 2.4×1011 /cm2 and 5×1010 /cm2 eV.

UR - http://www.scopus.com/inward/record.url?scp=0035163925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035163925&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0035163925

SP - 13

EP - 14

Y2 - 1 October 2001 through 4 October 2001

ER -

SiGe-on-insulator (SGOI): Substrate preparation and MOSFET fabrication for electron mobility evaluation

Abstract

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