Si 3N 4 has been produced on GaAs with low interface trap densities by electron cyclotron resonance N 2-He plasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400 °C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometric Si 3N 4. The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12-18 Å to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of 3.0 X 10 11 eV -1 cm -2 when nitrided at 150 °C. At 400 °C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving the Si 3N 4 in direct contact with the GaAs.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Mar 1 1998|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering