Si 3N 4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

D. M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, H. Morkoc

Research output: Contribution to journalArticle

Abstract

Si 3N 4 has been produced on GaAs with low interface trap densities by electron cyclotron resonance N 2-He plasma assisted nitridation of a Si layer deposited on a GaAs (100) substrate. Nitridation at 150 and 400 °C was monitored by x-ray photoelectron spectroscopy (XPS) and produced stoichiometric Si 3N 4. The nitride layer thickness, as determined from XPS as a function of photoelectron takeoff angle, initially increased rapidly with nitridation time with a transition at a thickness of 12-18 Å to slower growth. Capacitance/voltage and conductance/angular frequency measurements were performed on metal-insulator-semiconductor capacitors fabricated from the nitrided samples. The results demonstrated interface trap densities with a minimum of 3.0 X 10 11 eV -1 cm -2 when nitrided at 150 °C. At 400 °C the nitridation produced a poor quality interface, which resulted either from the higher temperature or from nitridation of all of the Si, leaving the Si 3N 4 in direct contact with the GaAs.

Original languageEnglish (US)
Pages (from-to)507-510
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number2
StatePublished - Mar 1 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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