Abstract
Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.
| Original language | English (US) |
|---|---|
| Title of host publication | 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS |
| Pages | 1214-1219 |
| Number of pages | 6 |
| DOIs | |
| State | Published - Dec 1 2007 |
| Externally published | Yes |
| Event | 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS - Geneva, Switzerland Duration: May 29 2007 → Jun 1 2007 |
Publication series
| Name | Proceedings of the IEEE International Frequency Control Symposium and Exposition |
|---|
Other
| Other | 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS |
|---|---|
| Country | Switzerland |
| City | Geneva |
| Period | 5/29/07 → 6/1/07 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Si-SiO2 composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation. / Kim, Bongsang; Melamud, Renata; Hopcroft, Matthew A.; Chandorkar, Saurabh A.; Bahl, Gaurav; Messana, Matthew; Candler, Rob N.; Yama, Gary; Kenny, Thomas.
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS. 2007. p. 1214-1219 4319270 (Proceedings of the IEEE International Frequency Control Symposium and Exposition).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Si-SiO2 composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation
AU - Kim, Bongsang
AU - Melamud, Renata
AU - Hopcroft, Matthew A.
AU - Chandorkar, Saurabh A.
AU - Bahl, Gaurav
AU - Messana, Matthew
AU - Candler, Rob N.
AU - Yama, Gary
AU - Kenny, Thomas
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.
AB - Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=49549092605&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=49549092605&partnerID=8YFLogxK
U2 - 10.1109/FREQ.2007.4319270
DO - 10.1109/FREQ.2007.4319270
M3 - Conference contribution
SN - 1424406463
SN - 9781424406463
T3 - Proceedings of the IEEE International Frequency Control Symposium and Exposition
SP - 1214
EP - 1219
BT - 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
ER -