Si-SiO2 composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation

Bongsang Kim; Renata Melamud; Matthew A. Hopcroft; Saurabh A. Chandorkar; Gaurav Bahl; Matthew Messana; Rob N. Candler; Gary Yama; Thomas Kenny

doi:10.1109/FREQ.2007.4319270

Si-SiO₂ composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation

Bongsang Kim, Renata Melamud, Matthew A. Hopcroft, Saurabh A. Chandorkar, Gaurav Bahl, Matthew Messana, Rob N. Candler, Gary Yama, Thomas Kenny

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Si-SiO₂ composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.

Original language	English (US)
Title of host publication	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Pages	1214-1219
Number of pages	6
DOIs	https://doi.org/10.1109/FREQ.2007.4319270
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS - Geneva, Switzerland Duration: May 29 2007 → Jun 1 2007

Publication series

Name	Proceedings of the IEEE International Frequency Control Symposium and Exposition

Other

Other	2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS
Country/Territory	Switzerland
City	Geneva
Period	5/29/07 → 6/1/07

ASJC Scopus subject areas

General Engineering

Online availability

10.1109/FREQ.2007.4319270

Library availability

Discover UIUC Full Text

Cite this

Kim, B., Melamud, R., Hopcroft, M. A., Chandorkar, S. A., Bahl, G., Messana, M., Candler, R. N., Yama, G., & Kenny, T. (2007). Si-SiO₂ composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation. In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS (pp. 1214-1219). Article 4319270 (Proceedings of the IEEE International Frequency Control Symposium and Exposition). https://doi.org/10.1109/FREQ.2007.4319270

Si-SiO₂ composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation. / Kim, Bongsang; Melamud, Renata; Hopcroft, Matthew A. et al.
2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS. 2007. p. 1214-1219 4319270 (Proceedings of the IEEE International Frequency Control Symposium and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, B, Melamud, R, Hopcroft, MA, Chandorkar, SA, Bahl, G, Messana, M, Candler, RN, Yama, G & Kenny, T 2007, Si-SiO₂ composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation. in 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS., 4319270, Proceedings of the IEEE International Frequency Control Symposium and Exposition, pp. 1214-1219, 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS, Geneva, Switzerland, 5/29/07. https://doi.org/10.1109/FREQ.2007.4319270

Kim B, Melamud R, Hopcroft MA, Chandorkar SA, Bahl G, Messana M et al. Si-SiO₂ composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation. In 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS. 2007. p. 1214-1219. 4319270. (Proceedings of the IEEE International Frequency Control Symposium and Exposition). doi: 10.1109/FREQ.2007.4319270

@inproceedings{787659ce07f14e3c9ee5c5a56c65755c,

title = "Si-SiO2 composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation",

abstract = "Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.",

author = "Bongsang Kim and Renata Melamud and Hopcroft, {Matthew A.} and Chandorkar, {Saurabh A.} and Gaurav Bahl and Matthew Messana and Candler, {Rob N.} and Gary Yama and Thomas Kenny",

year = "2007",

doi = "10.1109/FREQ.2007.4319270",

language = "English (US)",

isbn = "1424406463",

series = "Proceedings of the IEEE International Frequency Control Symposium and Exposition",

pages = "1214--1219",

booktitle = "2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS",

note = "2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS ; Conference date: 29-05-2007 Through 01-06-2007",

}

TY - GEN

T1 - Si-SiO2 composite MEMS resonators in CMOS compatible wafer-scale thin-film encapsulation

AU - Kim, Bongsang

AU - Melamud, Renata

AU - Hopcroft, Matthew A.

AU - Chandorkar, Saurabh A.

AU - Bahl, Gaurav

AU - Messana, Matthew

AU - Candler, Rob N.

AU - Yama, Gary

AU - Kenny, Thomas

PY - 2007

Y1 - 2007

N2 - Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.

AB - Si-SiO2 composite resonators in wafer-scale thin-film encapsulation are demonstrated. These resonators are fabricated in hermetic wafer-scale thin-film encapsulation, which enables mass production with high yield even after harsh post processes. Also this encapsulation provides potential for integration of frequency references with CMOS circuitry. The encapsulated composite resonators exhibit tunable temperature dependence of resonant frequency with a high quality factor of much larger than 10,000. Up to 40× improvement in temperature stability was demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=49549092605&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=49549092605&partnerID=8YFLogxK

U2 - 10.1109/FREQ.2007.4319270

DO - 10.1109/FREQ.2007.4319270

M3 - Conference contribution

AN - SCOPUS:49549092605

SN - 1424406463

SN - 9781424406463

T3 - Proceedings of the IEEE International Frequency Control Symposium and Exposition

SP - 1214

EP - 1219

BT - 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS

T2 - 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum, FCS

Y2 - 29 May 2007 through 1 June 2007

ER -