The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1985|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)