Si-implanted and disordered stripe-geometry AlxGa 1-xAs-GaAs quantum well lasers

P. Gavrilovic; K. Meehan; L. J. Guido; N. Holonyak; V. Eu; M. Feng; R. D. Burnham

doi:10.1063/1.95973

Si-implanted and disordered stripe-geometry Al_xGa _1-xAs-GaAs quantum well lasers

P. Gavrilovic, K. Meehan, L. J. Guido, N. Holonyak, V. Eu, M. Feng, R. D. Burnham

Research output: Contribution to journal › Article › peer-review

Abstract

The Si impurity is implanted into an Al_xGa_1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.

Original language	English (US)
Pages (from-to)	903-905
Number of pages	3
Journal	Applied Physics Letters
Volume	47
Issue number	9
DOIs	https://doi.org/10.1063/1.95973
State	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.95973

Library availability

Discover UIUC Full Text

Cite this

@article{34242103da4d46f58e92b385aa9229d1,

title = "Si-implanted and disordered stripe-geometry AlxGa 1-xAs-GaAs quantum well lasers",

abstract = "The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.",

author = "P. Gavrilovic and K. Meehan and Guido, {L. J.} and N. Holonyak and V. Eu and M. Feng and Burnham, {R. D.}",

year = "1985",

doi = "10.1063/1.95973",

language = "English (US)",

volume = "47",

pages = "903--905",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Si-implanted and disordered stripe-geometry AlxGa 1-xAs-GaAs quantum well lasers

AU - Gavrilovic, P.

AU - Meehan, K.

AU - Guido, L. J.

AU - Holonyak, N.

AU - Eu, V.

AU - Feng, M.

AU - Burnham, R. D.

PY - 1985

Y1 - 1985

N2 - The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.

AB - The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.

UR - http://www.scopus.com/inward/record.url?scp=11744293402&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=11744293402&partnerID=8YFLogxK

U2 - 10.1063/1.95973

DO - 10.1063/1.95973

M3 - Article

AN - SCOPUS:11744293402

SN - 0003-6951

VL - 47

SP - 903

EP - 905

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -