Si-implanted and disordered stripe-geometry AlxGa 1-xAs-GaAs quantum well lasers

P. Gavrilovic, K. Meehan, L. J. Guido, N. Holonyak, V. Eu, Milton Feng, R. D. Burnham

Research output: Contribution to journalArticlepeer-review


The Si impurity is implanted into an AlxGa1-x As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.

Original languageEnglish (US)
Pages (from-to)903-905
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - Dec 1 1985
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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