Si ejection and regrowth during the initial stages of Si(001) oxidation

David G. Cahill; Ph Avouris

doi:10.1063/1.106667

Si ejection and regrowth during the initial stages of Si(001) oxidation

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Abstract

The initial stages of oxidation of the Si(001)-2×1 surface have been studied using scanning tunneling microscopy and spectroscopy. Among the new sites generated by the exposure of this surface to O₂ are 1.4 Å high bumps on top of the surface. Upon annealing the O₂-exposed surface, or upon O₂ exposure at an elevated temperature, these bumps form highly anisotropic islands. Evidence is presented that these bumps and islands are made up of silicon ejected from the surface by the oxidation reaction.

Original language	English (US)
Pages (from-to)	326-328
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	3
DOIs	https://doi.org/10.1063/1.106667
State	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.106667

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abstract = "The initial stages of oxidation of the Si(001)-2×1 surface have been studied using scanning tunneling microscopy and spectroscopy. Among the new sites generated by the exposure of this surface to O2 are 1.4 {\AA} high bumps on top of the surface. Upon annealing the O2-exposed surface, or upon O2 exposure at an elevated temperature, these bumps form highly anisotropic islands. Evidence is presented that these bumps and islands are made up of silicon ejected from the surface by the oxidation reaction.",

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AB - The initial stages of oxidation of the Si(001)-2×1 surface have been studied using scanning tunneling microscopy and spectroscopy. Among the new sites generated by the exposure of this surface to O2 are 1.4 Å high bumps on top of the surface. Upon annealing the O2-exposed surface, or upon O2 exposure at an elevated temperature, these bumps form highly anisotropic islands. Evidence is presented that these bumps and islands are made up of silicon ejected from the surface by the oxidation reaction.

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Si ejection and regrowth during the initial stages of Si(001) oxidation

Abstract

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