Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system

M. Feng, V. Eu, T. Zielinski, H. B. Kim, J. M. Whelan

Research output: Contribution to journalArticlepeer-review

Fingerprint

Dive into the research topics of 'Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system'. Together they form a unique fingerprint.

Physics & Astronomy