Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system

M. Feng; V. Eu; T. Zielinski; H. B. Kim; J. M. Whelan

doi:10.1063/1.92480

Si-doped GaAs by SiCl₄-AsCl₃ liquid solution in AsCl₃/GaAs-Ga/H₂ chemical vapor deposition system

M. Feng, V. Eu, T. Zielinski, H. B. Kim, J. M. Whelan

Research output: Contribution to journal › Article › peer-review

Abstract

We have used SiC1₄/AsC1₃ liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC1₃/GaAs-Ga/H ₂ chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H₂ flow rate and by varying the temperature of the SiC1 ₄/AsC1₃ doping solution. The epitaxial layers doped using this technique have excellent room-temperature and liquid-nitrogen mobilities for electron concentrations between 1×10¹⁶ and 8×10 ¹⁸ cm^-3. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.

Original language	English (US)
Pages (from-to)	688-690
Number of pages	3
Journal	Applied Physics Letters
Volume	38
Issue number	9
DOIs	https://doi.org/10.1063/1.92480
State	Published - 1981
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.92480

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Cite this

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title = "Si-doped GaAs by SiCl4-AsCl3 liquid solution in AsCl3/GaAs-Ga/H2 chemical vapor deposition system",

abstract = "We have used SiC14/AsC13 liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC13/GaAs-Ga/H 2 chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H2 flow rate and by varying the temperature of the SiC1 4/AsC13 doping solution. The epitaxial layers doped using this technique have excellent room-temperature and liquid-nitrogen mobilities for electron concentrations between 1×1016 and 8×10 18 cm-3. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.",

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AU - Feng, M.

AU - Eu, V.

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AU - Kim, H. B.

AU - Whelan, J. M.

PY - 1981

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AB - We have used SiC14/AsC13 liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC13/GaAs-Ga/H 2 chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H2 flow rate and by varying the temperature of the SiC1 4/AsC13 doping solution. The epitaxial layers doped using this technique have excellent room-temperature and liquid-nitrogen mobilities for electron concentrations between 1×1016 and 8×10 18 cm-3. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.

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