We have used SiC14/AsC13 liquid solutions for Si doping of GaAs epitaxial layers grown using the AsC13/GaAs-Ga/H 2 chemical vapor deposition system. These solutions can be readily prepared with reproducible compositions and can provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H2 flow rate and by varying the temperature of the SiC1 4/AsC13 doping solution. The epitaxial layers doped using this technique have excellent room-temperature and liquid-nitrogen mobilities for electron concentrations between 1×1016 and 8×10 18 cm-3. This doping method is particularly useful for the growth as GaAs epitaxial layers for field effect transistor devices.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - 1981|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)