We determine the evolution of Si-H and C-H bonding during the growth of hydrogenated amorphous silicon carbide films by reactive magnetron sputtering of a Si target in (Ar+H 2 +CH 4 ). Si-H and C-H modes are observed by infrared reflectance spectroscopy. An optical cavity substrate is used to enhance the sensitivity. We identify Si-H stretching modes at 2110 and 2145 cm -1 due to Si-H clusters in microvoids and Si-H back-bonded to carbon, respectively. C-H stretching modes are identified at 2870, 2900, and 2950 cm -1 . These indicate dominant sp 3 bonding configuration for C. During initial growth, a transition layer rich in H and C is observed. Steady state growth is not achieved until ≳250 Å on SiO 2 substrates, and ∼70 Å on a-Si:H substrates.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - 1995|
ASJC Scopus subject areas
- Physics and Astronomy(all)