Si-C-H bonding in amorphous Si 1-x C x :H film/substrate interfaces determined by real time infrared absorption during reactive magnetron sputter deposition

M. Katiyar, Y. H. Yang, John R Abelson

Research output: Contribution to journalArticlepeer-review

Abstract

We determine the evolution of Si-H and C-H bonding during the growth of hydrogenated amorphous silicon carbide films by reactive magnetron sputtering of a Si target in (Ar+H 2 +CH 4 ). Si-H and C-H modes are observed by infrared reflectance spectroscopy. An optical cavity substrate is used to enhance the sensitivity. We identify Si-H stretching modes at 2110 and 2145 cm -1 due to Si-H clusters in microvoids and Si-H back-bonded to carbon, respectively. C-H stretching modes are identified at 2870, 2900, and 2950 cm -1 . These indicate dominant sp 3 bonding configuration for C. During initial growth, a transition layer rich in H and C is observed. Steady state growth is not achieved until ≳250 Å on SiO 2 substrates, and ∼70 Å on a-Si:H substrates.

Original languageEnglish (US)
Pages (from-to)1659-1663
Number of pages5
JournalJournal of Applied Physics
Volume78
Issue number3
DOIs
StatePublished - Dec 1 1995

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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