Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding

K. D. Choquette, K. M. Geib, B. Roberds, H. Q. Hou, R. D. Twesten, B. E. Hammons

Research output: Contribution to journalArticlepeer-review

Abstract

Selectively oxidised 850nm vertical cavity surface emitting laser diodes which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to top-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bonded to n-type GaP substrates exhibit higher series resistance and voltage.

Original languageEnglish (US)
Pages (from-to)1404-1405
Number of pages2
JournalElectronics Letters
Volume34
Issue number14
DOIs
StatePublished - Jul 9 1998
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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