Abstract
Selectively oxidised 850nm vertical cavity surface emitting laser diodes which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to top-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bonded to n-type GaP substrates exhibit higher series resistance and voltage.
Original language | English (US) |
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Pages (from-to) | 1404-1405 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 34 |
Issue number | 14 |
DOIs | |
State | Published - Jul 9 1998 |
Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering