Selectively oxidised 850nm vertical cavity surface emitting laser diodes which emit through transparent n-type GaP and AlGaAs substrates are reported. The short wavelength bottom-emitting lasers are fabricated using a low temperature inert gas wafer fusion process. Compared to top-emitting lasers, the bottom-emitting lasers bonded to n-type AlGaAs substrates show comparable electrical characteristics, while lasers bonded to n-type GaP substrates exhibit higher series resistance and voltage.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Jul 9 1998|
ASJC Scopus subject areas
- Electrical and Electronic Engineering