Short-wavelength bottom-emitting vertical-cavity lasers

K. M. Geib; K. D. Choquette; H. Q. Hou; M. Hagerott Crawford; B. E. Hammons

doi:10.1109/cleo.1998.676052

Short-wavelength bottom-emitting vertical-cavity lasers

K. M. Geib, K. D. Choquette, H. Q. Hou, M. Hagerott Crawford, B. E. Hammons

Research output: Contribution to conference › Paper › peer-review

Abstract

Short-wavelength bottom-emitting vertical-cavity surface-emitting lasers (VCSEL) is presented. This high-performance 850-nm selectively oxidized VCSEL arrays are bonded to GaP and AlGaAs transparent substrates using simple wafer fusion process to enable emission through the substrate. The device characteristic of the VCSELs are provided.

Original language	English (US)
Pages	199-200
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.1998.676052
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO - San Francisco, CA, USA Duration: May 3 1998 → May 8 1998

Other

Other	Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO
City	San Francisco, CA, USA
Period	5/3/98 → 5/8/98

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/cleo.1998.676052

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title = "Short-wavelength bottom-emitting vertical-cavity lasers",

abstract = "Short-wavelength bottom-emitting vertical-cavity surface-emitting lasers (VCSEL) is presented. This high-performance 850-nm selectively oxidized VCSEL arrays are bonded to GaP and AlGaAs transparent substrates using simple wafer fusion process to enable emission through the substrate. The device characteristic of the VCSELs are provided.",

author = "Geib, {K. M.} and Choquette, {K. D.} and Hou, {H. Q.} and Crawford, {M. Hagerott} and Hammons, {B. E.}",

year = "1998",

doi = "10.1109/cleo.1998.676052",

language = "English (US)",

pages = "199--200",

note = "Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 03-05-1998 Through 08-05-1998",

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TY - CONF

T1 - Short-wavelength bottom-emitting vertical-cavity lasers

AU - Geib, K. M.

AU - Choquette, K. D.

AU - Hou, H. Q.

AU - Crawford, M. Hagerott

AU - Hammons, B. E.

PY - 1998

Y1 - 1998

N2 - Short-wavelength bottom-emitting vertical-cavity surface-emitting lasers (VCSEL) is presented. This high-performance 850-nm selectively oxidized VCSEL arrays are bonded to GaP and AlGaAs transparent substrates using simple wafer fusion process to enable emission through the substrate. The device characteristic of the VCSELs are provided.

AB - Short-wavelength bottom-emitting vertical-cavity surface-emitting lasers (VCSEL) is presented. This high-performance 850-nm selectively oxidized VCSEL arrays are bonded to GaP and AlGaAs transparent substrates using simple wafer fusion process to enable emission through the substrate. The device characteristic of the VCSELs are provided.

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UR - http://www.scopus.com/inward/citedby.url?scp=0031643189&partnerID=8YFLogxK

U2 - 10.1109/cleo.1998.676052

DO - 10.1109/cleo.1998.676052

M3 - Paper

AN - SCOPUS:0031643189

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EP - 200

T2 - Proceedings of the 1998 Conference on Lasers and Electro-Optics, CLEO

Y2 - 3 May 1998 through 8 May 1998

ER -

Short-wavelength bottom-emitting vertical-cavity lasers

Abstract

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