Short wavelength bottom-emitting VCSELs

Kent D. Choquette, Jonathon S. Barton, Kent M. Geib, Andy A. Allerman, Jana Jo Hindi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The fabrication and performance of selectivity oxidized 850 nm vertical cavity surface emitting laser (VCSEL) diodes which emit through transparent GaP substrates is reported. Emission through the substrate is advantageous for many VCSEL configurations, such as for the incorporation of optical elements in the substrate or flip-chip integration to microelectronic circuitry. The short wavelength bottom-emitting VCSELs are fabricated by wafer fusion using an inert gas low temperature annealing process. The electrical characteristics of n- and p-type GaAs/GaAs and GaAs/GaP wafer bonded interfaces have been examined to optimize the annealing temperature. A significant reduction of the current-voltage characteristics of the VCSELs bonded to GaP substrates has been achieved whereby the bottom-emitting VCSELs show similar threshold voltage as compared to top-emitting lasers.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages56-59
Number of pages4
ISBN (Print)0819430978
StatePublished - Jan 1 1999
Externally publishedYes
EventProceedings of the 1999 Vertical-Cavity Surface-Emitting Lasers III - San Jose, CA, USA
Duration: Jan 25 1999Jan 26 1999

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume3627
ISSN (Print)0277-786X

Other

OtherProceedings of the 1999 Vertical-Cavity Surface-Emitting Lasers III
CitySan Jose, CA, USA
Period1/25/991/26/99

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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