Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

J. M. Dallesasse; D. W. Nam; D. G. Deppe; N. Holonyak; R. M. Fletcher; C. P. Kuo; T. D. Osentowski; M. G. Craford

doi:10.1063/1.100388

Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In_0.5(Al_xGa_1-x)_0.5P quantum well lasers

J. M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journal › Article › peer-review

Abstract

Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In_0.5(Al _xGa_1-x)_0.5 P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30°C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×10³ A/cm² (-30°C) to 3.7×10³ A/cm² (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×10³ W/cm², J _eq∼2.9×10³ A/cm²) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Original language	English (US)
Pages (from-to)	1826-1828
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	19
DOIs	https://doi.org/10.1063/1.100388
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.100388

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@article{9bd64417a63f4553ac908064aa6eecca,

title = "Short-wavelength (≲6400 {\AA}) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers",

abstract = "Data are presented demonstrating short-wavelength (≲6400 {\AA}) continuous (cw) laser operation of p-n diode In0.5(Al xGa1-x)0.5 P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30°C to room temperature (RT≊300 K, λ≊6395 {\AA}) the threshold current density changes from 2.3×103 A/cm2 (-30°C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, J eq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.",

author = "Dallesasse, {J. M.} and Nam, {D. W.} and Deppe, {D. G.} and N. Holonyak and Fletcher, {R. M.} and Kuo, {C. P.} and Osentowski, {T. D.} and Craford, {M. G.}",

year = "1988",

doi = "10.1063/1.100388",

language = "English (US)",

volume = "53",

pages = "1826--1828",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

AU - Dallesasse, J. M.

AU - Nam, D. W.

AU - Deppe, D. G.

AU - Holonyak, N.

AU - Fletcher, R. M.

AU - Kuo, C. P.

AU - Osentowski, T. D.

AU - Craford, M. G.

PY - 1988

Y1 - 1988

N2 - Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(Al xGa1-x)0.5 P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30°C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (-30°C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, J eq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

AB - Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(Al xGa1-x)0.5 P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30°C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (-30°C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, J eq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

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