Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1-x)0.5P quantum well lasers

J. M. Dallesasse, D. W. Nam, D. G. Deppe, N. Holonyak, R. M. Fletcher, C. P. Kuo, T. D. Osentowski, M. G. Craford

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented demonstrating short-wavelength (≲6400 Å) continuous (cw) laser operation of p-n diode In0.5(Al xGa1-x)0.5 P multiple quantum well heterostructure (QWH) lasers grown lattice matched on GaAs substrates using metalorganic chemical vapor deposition. In the range from -30°C to room temperature (RT≊300 K, λ≊6395 Å) the threshold current density changes from 2.3×103 A/cm2 (-30°C) to 3.7×103 A/cm2 (RT, 300 K). The cw 300 K photopumped laser operation of the same quaternary QWH crystal is an order of magnitude lower in threshold (7×103 W/cm2, J eq∼2.9×103 A/cm2) than previously reported for this crystal system, and agrees with the successful demonstration of cw 300 K laser diodes at this short wavelength.

Original languageEnglish (US)
Pages (from-to)1826-1828
Number of pages3
JournalApplied Physics Letters
Volume53
Issue number19
DOIs
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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