Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method

Miao Xin, Zhang Chen, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bottom-up self-assembled planar nanowires (NWs) are of great interest for device application because they can be readily integrated using conventional processing technique. Planar GaAs NWs have been demonstrated to have great crystal quality (free from top-down dry etching damages) and high electron mobility. Considering NWs' 3D geometry, planar NW-FETs inherently benefit from the enhanced electron confinement and electrostatic gate control which are essential to suppress short channel effects and enable the down-scaling of modern transistors. We had fabricated multiple channel planar NW high electron mobility transistors (NW-HEMTs) with self-aligned intrinsic planar <60;110> GaAs NWs capped with Si doped Al xGa 1-xAs thin film as the channel on semi-insulating (100) GaAs substrates and demonstrated the feasibility of wafer-scale electrical uniformity of bottom-up NW-FETs previously [1-4]. However, these prototype multiple channel planar NW-HEMTs were of 1.2μm gate length and ∼250nm NW diameter in the channel.

Original languageEnglish (US)
Title of host publication70th Device Research Conference, DRC 2012 - Conference Digest
Pages119-120
Number of pages2
DOIs
StatePublished - Oct 5 2012
Event70th Device Research Conference, DRC 2012 - University Park, PA, United States
Duration: Jun 18 2012Jun 20 2012

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other70th Device Research Conference, DRC 2012
CountryUnited States
CityUniversity Park, PA
Period6/18/126/20/12

Fingerprint

High electron mobility transistors
Nanowires
Field effect transistors
Dry etching
Electron mobility
Electrostatics
Transistors
Thin films
Crystals
Geometry
Electrons
Substrates
Processing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Xin, M., Chen, Z., & Li, X. (2012). Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method. In 70th Device Research Conference, DRC 2012 - Conference Digest (pp. 119-120). [6256981] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6256981

Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method. / Xin, Miao; Chen, Zhang; Li, Xiuling.

70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 119-120 6256981 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xin, M, Chen, Z & Li, X 2012, Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256981, Device Research Conference - Conference Digest, DRC, pp. 119-120, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256981
Xin M, Chen Z, Li X. Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method. In 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. p. 119-120. 6256981. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2012.6256981
Xin, Miao ; Chen, Zhang ; Li, Xiuling. / Short-channel enhancement-mode planar GaAs nanowire HEMTs through a bottom-up method. 70th Device Research Conference, DRC 2012 - Conference Digest. 2012. pp. 119-120 (Device Research Conference - Conference Digest, DRC).
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