Shape transformation of nanoporous GaN by annealing: From buried cavities to nanomembranes

Keyphrases

• Semiconductors 100%
• Annealing 100%
• Nanomembrane 100%
• Buried Cavities 100%
• Shape Transformation 100%
• Nanoporous GaN 100%
• Growth Temperature 50%
• Room Temperature 50%
• Epitaxy 50%
• Device Design 50%
• Etchant 50%
• Gallium Nitride 50%
• Proof-of-concept Demonstration 50%
• Micromachining 50%
• Mass Transport Processes 50%
• Curvature-driven 50%
• Electrochemical Process 50%
• Monocrystalline 50%
• Inert Ceramic 50%

Engineering

• Shape Transformation 100%
• Microscale 50%
• Nanoscale 50%
• Room Temperature 50%
• Nitride 50%
• Growth Temperature 50%
• Transport Process 50%
• Micro Machining 50%
• Proof-of-Concept 50%
• Electrochemical Process 50%
• Monocrystalline 50%
• Mass Transport 50%

Material Science

• Gallium Nitride 100%
• Epitaxy 100%
• Micromachining 100%