By using the hydrogen/deuterium isotope effect, we propose a new technique to separate and quantify the effects of hot-carrier-induced interface trap creation and oxide charge trapping on the degradation in PMOSFETs. In addition to the well-known hot-electron-induced-punchthrough (HEIP) mechanism, we find that two additional mechanisms, namely, interface trap creation and hole trapping in the oxide, also play important roles in PMOSFET degradation. The degradation mechanisms are highly dependent on stress conditions. For low gate voltage Vgs stress, HEIP is found to dominate the shift of threshold voltage Vt. When Vgs increases to a moderate value, the Vt shift can be fully dominated by interface trap creation. Hole injection and trapping into the oxide occurs when Vgs is increased further to Vgs = Vds. For the first time, the effects of interface trap creation and oxide charge trapping on the Vt shift are quantified by the proposed technique.
- Degradation mechanisms
- Hot-carrier effect
- Interface trap creation
- Oxide charge trapping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering