Abstract
Using light as a probe to investigate perturbations with deep subwavelength dimensions in large-scale wafers is challenging because of the diffraction limit and the weak Rayleigh scattering. In this Letter, we report on a nondestructive noninterference far-field imaging method, which is built upon electrodynamic principles (mechanical work and force) of the light-matter interaction, rather than the intrinsic properties of light. We demonstrate sensing of nanoscale perturbations with sub-10 nm features in semiconductor nanopatterns. This framework is implemented using a visible-light bright-field microscope with a broadband source and a through-focus scanning apparatus. This work creates a new paradigm for exploring light-matter interactions at the nanoscale using microscopy that can potentially be extended to many other problems, for example, bioimaging, material analysis, and nanometrology.
Original language | English (US) |
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Pages (from-to) | 5347-5355 |
Number of pages | 9 |
Journal | Nano letters |
Volume | 19 |
Issue number | 8 |
DOIs | |
State | Published - Aug 14 2019 |
Keywords
- Nanoscale sensing
- defect inspection
- electrodynamics
- nanotechnology
- optical microscopy
- semiconductors
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering