Semiconductor method and device

Nick Holonyak (Inventor), Milton Feng (Inventor)

Research output: Patent

Abstract

A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.
Original languageEnglish (US)
U.S. patent number7091082
Filing date6/4/04
StatePublished - Aug 15 2006

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