Semiconductor devices fabricated with passivated high aluminum-content III-V material

Nick Holonyak (Inventor), Tim A. Richard (Inventor), Fred A Kish (Inventor), Serge Rudaz (Inventor), Chun Lei (Inventor), Mark R. Keever (Inventor)

Research output: Patent

Abstract

LEDs and other semiconductor devices fabricated with III-V materials and having exposed Al-bearing surfaces passivated with native oxides are disclosed. A known high temperature water vapor oxidation process is used to passivate the exposed layers of Al-bearing III-V semiconductor materials in confined-emission spot LEDs and other light emitting devices. These devices exhibit greatly improved wet, high temperature operating life, with little to no degradation in light output when exposed to such conditions.
Original languageEnglish (US)
U.S. patent number5517039
Filing date11/14/94
StatePublished - May 14 1996

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