Semiconductor devices and techniques for controlled optical confinement

Stephen J Caracci; Nick Holonyak; Fred A Kish

Semiconductor devices and techniques for controlled optical confinement

Stephen J Caracci (Inventor)
, Nick Holonyak (Inventor)
, Fred A Kish (Inventor)

University of Illinois Urbana-Champaign

Research output: Patent

Abstract

The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.

Original language	English (US)
U.S. patent number	5327448
Filing date	3/30/92
State	Published - Jul 5 1994

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title = "Semiconductor devices and techniques for controlled optical confinement",

abstract = "The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.",

author = "Caracci, \{Stephen J\} and Nick Holonyak and Kish, \{Fred A\}",

note = "The present invention was made, in part, with Government support under Army Research Office Contract No. DAAL 03-89-K-008, and National Science Foundation Grant No.s ECD 89-43106 and DMR 89-20538. The Government has certain rights in this invention.; 5327448",

year = "1994",

month = jul,

day = "5",

language = "English (US)",

type = "Patent",

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TY - PAT

T1 - Semiconductor devices and techniques for controlled optical confinement

AU - Caracci, Stephen J

AU - Holonyak, Nick

AU - Kish, Fred A

N1 - The present invention was made, in part, with Government support under Army Research Office Contract No. DAAL 03-89-K-008, and National Science Foundation Grant No.s ECD 89-43106 and DMR 89-20538. The Government has certain rights in this invention.

PY - 1994/7/5

Y1 - 1994/7/5

N2 - The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.

AB - The disclosure is directed to improved techniques and devices employing an aluminum-bearing III-V semiconductor material and a native oxide of aluminum that is formed in the semiconductor material. Effective optical confinement, tailored to obtain desired operating conditions, can be achieved with a thick native oxide of aluminum that extends through at least one-third of the thickness of the aluminum-bearing layer in which the native oxide is formed. The resultant lateral index step can be made quite large and employed for devices such as ring lasers.

M3 - Patent

M1 - 5327448

Y2 - 1992/03/30

ER -

Semiconductor devices and techniques for controlled optical confinement

Abstract

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