Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer

Nick Holonyak (Inventor)

Research output: Patent

Abstract

A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer. The tunnel junction includes a tunnel barrier that is a non-continuous layer. The device also includes means for causing lateral electron flow into the tunnel junction.
Original languageEnglish (US)
U.S. patent number6369403
StatePublished - Apr 9 2002

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