@misc{95b78b247fe7460cb671b5546340792e,
title = "Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer",
abstract = "A semiconductor light emitting device is disclosed. The device has a tunnel junction disposed between a p-type layer and an n-type layer. The tunnel junction includes a tunnel barrier that is a non-continuous layer. The device also includes means for causing lateral electron flow into the tunnel junction.",
author = "Nick Holonyak",
note = "This invention was made with Government support under Contract DAAH04-96-1-033 of Army Research Office, under Contract MDA972-94-1-004 of DARPA Center of Optoelectronics Science and Technology, and under the Grant SBCUTC-97-0080 of National Science Foundation. The Government has certain rights in this invention.; 6369403",
year = "2002",
month = apr,
day = "9",
language = "English (US)",
type = "Patent",
}