Semiconductor devices and methods

Nick Holonyak (Inventor), Russell Dupuis (Inventor)

Research output: Patent

Abstract

A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of the device; and providing a layer of quantum dots disposed in one of the adjacent layers, and spaced from the quantum well, whereby carriers can tunnel in either direction between the quantum well and the quantum dots.
Original languageEnglish (US)
U.S. patent number6753273
StatePublished - Jun 22 2004

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