Semiconductor Device With Strained InGaAs Layer

Timothy S Henderson (Inventor), Hadis Morkoc (Inventor), Andrew Ketterson (Inventor), John Klem (Inventor), W Ted Masselink (Inventor)

Research output: Patent


A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.
Original languageEnglish (US)
U.S. patent number4827320
Filing date9/19/86
StatePublished - May 2 1989


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