Semiconductor Device With Strained InGaAs Layer

Timothy S Henderson; Hadis Morkoc; Andrew Ketterson; John Klem; W Ted Masselink

Semiconductor Device With Strained InGaAs Layer

Timothy S Henderson (Inventor), Hadis Morkoc (Inventor), Andrew Ketterson (Inventor), John Klem (Inventor), W Ted Masselink (Inventor)

Research output: Patent

Abstract

A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.

Original language	English (US)
U.S. patent number	4827320
Filing date	9/19/86
State	Published - May 2 1989

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title = "Semiconductor Device With Strained InGaAs Layer",

abstract = "A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.",

author = "Henderson, {Timothy S} and Hadis Morkoc and Andrew Ketterson and John Klem and Masselink, {W Ted}",

year = "1989",

month = may,

day = "2",

language = "English (US)",

type = "Patent",

note = "4827320",

}

TY - PAT

T1 - Semiconductor Device With Strained InGaAs Layer

AU - Henderson, Timothy S

AU - Morkoc, Hadis

AU - Ketterson, Andrew

AU - Klem, John

AU - Masselink, W Ted

PY - 1989/5/2

Y1 - 1989/5/2

N2 - A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.

AB - A strained In.sub.y Ga.sub.l-y As layer is employed in a GaAs/Al.sub.x Ga.sub.l-x As transistor. Since the bandgap of In.sub.y Ga.sub.l-y As is much smaller than that of GaAs, there is no need for a troublesome large-mole-fraction of aluminum in the Al.sub.x Ga.sub.l-x As layer in order to maintain a large bandgap discontinuity. This and other advantages of the structure set forth result in devices having improved operating characteristics.

M3 - Patent

M1 - 4827320

Y2 - 1986/09/19

ER -

Semiconductor Device With Strained InGaAs Layer

Abstract

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