The disclosure is directed to a semiconductor device comprising an active region between a pair of injecting/collecting layers, the active region comprising at least one layer of a first binary semiconductor material disposed between coupling barriers of a second different binary semiconductor material that is lattice matched to the first binary semiconductor material. In a preferred embodiment the active region comprises one or more layers of gallium arsenide separated by aluminum arsenide barrier layers.
|Original language||English (US)|
|U.S. patent number||4439782|
|State||Published - Mar 27 1984|