Abstract
The disclosed invention utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The onset of negative differential resistance can be controlled via the gate of the field effect transistor. In one embodiment there is homojunction tunneling within a bipolar field effect structure.
Original language | English (US) |
---|---|
U.S. patent number | 5021841 |
Filing date | 10/14/88 |
State | Published - Jun 4 1991 |