Semiconductor device with controlled negative differential resistance characteristic

Jean-Pierre Leburton (Inventor), James Kolodzey (Inventor)

Research output: Patent

Abstract

The disclosed invention utilizes a homojunction tunneling mechanism of injection into the channel of a modulation doped field effect transistor. The onset of negative differential resistance can be controlled via the gate of the field effect transistor. In one embodiment there is homojunction tunneling within a bipolar field effect structure.
Original languageEnglish (US)
U.S. patent number5021841
Filing date10/14/88
StatePublished - Jun 4 1991

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