Semiconductor device and method for producing light and laser emission

John Michael Dallesasse (Inventor), Milton Feng (Inventor)

Research output: Patent

Abstract

A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.
Original languageEnglish (US)
U.S. patent number8948226
StatePublished - Feb 3 2015

Fingerprint

Dive into the research topics of 'Semiconductor device and method for producing light and laser emission'. Together they form a unique fingerprint.

Cite this