Semiconductor device and method for producing light and laser emission

John Michael Dallesasse (Inventor), Milton Feng (Inventor)

Research output: Patent


A method for producing light emission, including the following steps: providing a transistor structure that includes a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region; providing a cascade region between the base region and the collector region, the cascade region having a plurality of sequences of quantum size regions, the quantum size regions of the sequences varying, in the direction toward the collector region, from a relatively higher energy state to a relatively lower energy state; providing emitter, base and collector electrodes respectively coupled with the emitter, base, and collector regions; and applying electrical signals with respect to the emitter, base, and collector electrodes to cause and control light emission from the cascade region.
Original languageEnglish (US)
U.S. patent number8948226
Filing date8/2/13
StatePublished - Feb 3 2015


Dive into the research topics of 'Semiconductor device and method for producing light and laser emission'. Together they form a unique fingerprint.

Cite this