Semiconductor defect metrology using laser-based quantitative phase imaging

Renjie Zhou, Chris Edwards, Gabriel Popescu, Lynford L Goddard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A highly sensitive laser-based quantitative phase imaging tool, using an epi-illumination diffraction phase microscope, has been developed for silicon wafer defect inspection. The first system used a 532 nm solid-state laser and detected 20 nm by 100 nm by 110 nm defects in a 22 nm node patterned silicon wafer. The second system, using a 405 nm diode laser, is more sensitive and has enabled detection of 15 nm by 90 nm by 35 nm defects in a 9 nm node densely patterned silicon wafer. In addition to imaging, wafer scanning and image-post processing are also crucial for defect detection.

Original languageEnglish (US)
Title of host publicationQuantitative Phase Imaging
EditorsYongKeun Park, Gabriel Popescu
PublisherSPIE
ISBN (Electronic)9781628414264
DOIs
StatePublished - Jan 1 2015
Event1st Conference on Quantitative Phase Imaging, QPI 2015 - San Francisco, United States
Duration: Feb 7 2015Feb 10 2015

Publication series

NameProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume9336
ISSN (Print)1605-7422

Other

Other1st Conference on Quantitative Phase Imaging, QPI 2015
CountryUnited States
CitySan Francisco
Period2/7/152/10/15

Keywords

  • Wafer defect inspection
  • image post-processing
  • interferometric microscopy
  • laser defect inspection
  • quantitative phase imaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Zhou, R., Edwards, C., Popescu, G., & Goddard, L. L. (2015). Semiconductor defect metrology using laser-based quantitative phase imaging. In Y. Park, & G. Popescu (Eds.), Quantitative Phase Imaging [93361I] (Progress in Biomedical Optics and Imaging - Proceedings of SPIE; Vol. 9336). SPIE. https://doi.org/10.1117/12.2078329