Self-patterned aluminium interconnects and ring electrodes for arrays of microcavity plasma devices encapsulated in Al2O3

K. S. Kim, S. J. Park, J. G. Eden

Research output: Contribution to journalArticlepeer-review


Automatic formation of Al interconnects and ring electrodes, fully encapsulated by alumina, in planar arrays of Al2O3/Al/ Al2O3 microcavity plasma devices has been accomplished by electrochemical processing of Al foil. Following the fabrication of cylindrical microcavities (50-350 νm in diameter) in 127 νm thick Al foil, virtually complete anodization of the foil yields azimuthally symmetric Al electrodes surrounding each cavity and interconnects between adjacent microcavities that are produced and simultaneously buried within a transparent Al2O 3 film without the need for conventional patterning techniques. The diameter and pitch of the microcavities prior to anodization, as well as the anodization process parameters, determine which of the microcavity plasma devices in a one- or two-dimensional array are connected electrically. Data presented for 200 νm diameter cavities with a pitch of 150-225 νm illustrate the patterning of the interconnects and electrode connectivity after 4-10 h of anodization in oxalic acid. Self-patterned, linear arrays comprising 25 dielectric barrier devices have been excited by a sinusoidal or bipolar pulse voltage waveform and operated in 400-700 Torr of rare gas. Owing to the electrochemical conversion of most of the Al foil into Al2O 3, the self-formed arrays exhibit an areal capacitance ∼82% lower than that characteristic of previous Al/Al2O3 device arrays (Park et al 2006 J. Appl. Phys. 99 026107).

Original languageEnglish (US)
Article number012004
JournalJournal of Physics D: Applied Physics
Issue number1
StatePublished - Jan 7 2008

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films


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