Abstract
A quantum transport model to investigate lateral resonant tunneling through one-dimensional states in a dual-gate field-effect transistor is presented. A self-consistent scheme based on the iterative extraction orthogonalization method for calculating the electronic properties of two-dimensionally confined carriers is employed. The model successfully reproduces the multiple negative differential resistance in the I-V characteristics; however, it is necessary to invoke nonuniformities and disorder at the heterointerface of the resonant tunneling structure to explain the observation of multiple negative differential resistance in the I-V characteristics.
Original language | English (US) |
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Pages (from-to) | 2887-2892 |
Number of pages | 6 |
Journal | Journal of Applied Physics |
Volume | 76 |
Issue number | 5 |
DOIs | |
State | Published - 1994 |
ASJC Scopus subject areas
- General Physics and Astronomy