Self-consistent simulation of quantum transport in dual-gate field-effect transistors

Jeffrey M. Bigelow, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

A quantum transport model to investigate lateral resonant tunneling through one-dimensional states in a dual-gate field-effect transistor is presented. A self-consistent scheme based on the iterative extraction orthogonalization method for calculating the electronic properties of two-dimensionally confined carriers is employed. The model successfully reproduces the multiple negative differential resistance in the I-V characteristics; however, it is necessary to invoke nonuniformities and disorder at the heterointerface of the resonant tunneling structure to explain the observation of multiple negative differential resistance in the I-V characteristics.

Original languageEnglish (US)
Pages (from-to)2887-2892
Number of pages6
JournalJournal of Applied Physics
Volume76
Issue number5
DOIs
StatePublished - 1994

ASJC Scopus subject areas

  • General Physics and Astronomy

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