We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the Bipolar Tunneling Field-Effect Transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm2 and theoretical peak-to-valley ratios up to 300.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering