Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

Jeffrey M. Bigelow, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the Bipolar Tunneling Field-Effect Transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm2 and theoretical peak-to-valley ratios up to 300.

Original languageEnglish (US)
Pages (from-to)125-131
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume41
Issue number2
DOIs
StatePublished - Feb 1 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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