Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

Jeffrey M. Bigelow; J. P. Leburton

doi:10.1109/16.277389

Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

Jeffrey M. Bigelow, J. P. Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the Bipolar Tunneling Field-Effect Transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm² and theoretical peak-to-valley ratios up to 300.

Original language	English (US)
Pages (from-to)	125-131
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	41
Issue number	2
DOIs	https://doi.org/10.1109/16.277389
State	Published - 1994

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.277389

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abstract = "We present a model for the calculation of the tunneling current in resonant interband tunneling devices based on a transfer-Hamiltonian formalism. The model is fully self-consistent and includes electrons and both light and heavy holes. In particular, we show the viability of the Bipolar Tunneling Field-Effect Transistor as a three-terminal multiple-NDR device with predicted currents reaching over 1000 A/cm2 and theoretical peak-to-valley ratios up to 300.",

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Self-consistent modeling of resonant interband tunneling in bipolar tunneling field-effect transistors

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