A model for resonant tunneling between electrons and holes across the homojunction of a BITFET (bipolar tunneling field effect transistor) structure is presented. A transfer-Hamiltonian method is used to calculate the tunneling current between electrons and both heavy and light holes, and is incorporated into a self-consistent Poisson-Schrodinger solver. Results for two material systems, AlGaAs-GaAs and AlInAs-GaInAs, show multiple abrupt NDRs (negative differential resistances) under forward bias. Under reverse bias, the model suggests the possibility of achieving smooth NDRs as a result of the deformation of the confining potential.
|Original language||English (US)|
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - Dec 1990|
ASJC Scopus subject areas
- Electrical and Electronic Engineering