Self-consistent modeling of bipolar tunnel heterostructures with quantum mechanical current

J. M. Bigelow, Jean-Pierre Leburton

Research output: Contribution to journalArticlepeer-review


A model for resonant tunneling between electrons and holes across the homojunction of a BITFET (bipolar tunneling field effect transistor) structure is presented. A transfer-Hamiltonian method is used to calculate the tunneling current between electrons and both heavy and light holes, and is incorporated into a self-consistent Poisson-Schrodinger solver. Results for two material systems, AlGaAs-GaAs and AlInAs-GaInAs, show multiple abrupt NDRs (negative differential resistances) under forward bias. Under reverse bias, the model suggests the possibility of achieving smooth NDRs as a result of the deformation of the confining potential.

Original languageEnglish (US)
Pages (from-to)767-770
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1990

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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