TY - JOUR
T1 - Self-Assembled Monolayers of Cyclohexyl-Terminated Phosphonic Acids as a General Dielectric Surface for High-Performance Organic Thin-Film Transistors
AU - Liu, Danqing
AU - He, Zikai
AU - Su, Yaorong
AU - Diao, Ying
AU - Mannsfeld, Stefan C.B.
AU - Bao, Zhenan
AU - Xu, Jianbin
AU - Miao, Qian
PY - 2014/11/1
Y1 - 2014/11/1
N2 - A novel self-assembled monolayer (SAM) on AlOy/TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy/TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm2 V-1 s-1 for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors.
AB - A novel self-assembled monolayer (SAM) on AlOy/TiOx is terminated with cyclohexyl groups, an unprecedented terminal group for all kinds of SAMs. The SAM-modified AlOy/TiOx functions as a general dielectric, enabling organic thin-film transistors with a field-effect mobility higher than 5 cm2 V-1 s-1 for both holes and electrons, good air stability with low operating voltage, and general applicability to solution-processed and vacuum-deposited n-type and p-type organic semiconductors.
KW - interface engineering
KW - organic thin-film transistors
KW - self-assembled monolayers (SAMs)
UR - http://www.scopus.com/inward/record.url?scp=84909981805&partnerID=8YFLogxK
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U2 - 10.1002/adma.201402822
DO - 10.1002/adma.201402822
M3 - Article
C2 - 25205623
AN - SCOPUS:84909981805
SN - 0935-9648
VL - 26
SP - 7190
EP - 7196
JO - Advanced Materials
JF - Advanced Materials
IS - 42
ER -