Self-assembled In_0.5 Ga_0.5 As quantum dots on GaP

We demonstrate the growth and luminescence of coherently strained In _0.5 Ga_0.5 As self-assembled quantum dots on GaP. Cross-sectional and planar-view transmission electron microscopy confirmed the dislocation-free nature of the In_0.5 Ga_0.5 As quantum dots and GaP cap layers. Intense photoluminescence from the quantum dots was measured at 80 K and was visible to the unaided eye in ambient lighting. The photoluminescence results show that emission energy can be controlled by varying the In_0.5 Ga_0.5 As deposition thickness. In combination with recent advances in the growth of GaP on Si, the In_0.5 Ga _0.5 As quantum dots demonstrated here could enable monolithic optoelectronic integration on Si.