Self-aligned planar GaAs nanowires grown by MOCVD on GaAs (100) substrates

Seth A. Fortuna, Xi Zeng, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of self-aligned planar GaAs nanowires on GaAs (100) substrates is demonstrated using Au-catalyzed metalorganic chemical vapor deposition (MOCVD). The effect of growth temperature on nanowire orientation and the growth mechanism are discussed.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2008
PublisherOptical Society of America
ISBN (Print)9781557528599
StatePublished - 2008
EventConference on Lasers and Electro-Optics, CLEO 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2008
Country/TerritoryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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