@inproceedings{fefe855e1c614939b919439fe01d0a73,
title = "Self-aligned InP DHBTs for 150GHz digital and mixed signal circuits",
abstract = "A production oriented manufacturing process for Indium Phosphide double-heterojunction bipolar transistor (DHBT) devices that enables 150GHz digital and mixed signal circuits is presented. These transistors have cut-off frequency (f ) and maximum oscillation frequency (f max) both over 300 GHz and open-base breakdown voltage (BV ceo) over 4 V. Common Mode Logic (CML) ring oscillators have exhibited 1.95 ps gate delay and Emitter Coupled Logic (ECL) static frequency dividers that operate up to 152GHz have been demonstrated to benchmark this InP process technology. A 4:1 multiplexer for 100 Gb/s circuits is discussed along with a Gilbert cell Variable Gain Amplifier with excess of 50GHz bandwidth and record gain bandwidth product of 397 GHz.",
keywords = "Gilbert Cell, InP DHBT, Mux, Static frequency divider",
author = "Minh Le and Gang He and Ron Hess and Paul Partyka and Bin Li and Randy Bryie and Sam Rustomji and Grant Kim and Rainier Lee and Jeff Pepper and Max Helix and Ray Milano and Richard Elder and Douglas Jansen and Frank Stroili and Lai, {Jie Wei} and Milton Feng",
year = "2005",
doi = "10.1109/ICIPRM.2005.1517493",
language = "English (US)",
isbn = "0780388917",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
pages = "325--330",
booktitle = "2005 International Conference on Indium Phosphide and Related Materials",
note = "2005 International Conference on Indium Phosphide and Related Materials ; Conference date: 08-05-2005 Through 12-05-2005",
}