Self-aligned Cu etch mask for individually addressable metallic and semiconducting carbon nanotubes

Yiran Jiang, Feng Xiong, Cheng Lin Tsai, Taner Ozel, Eric Pop, Moonsub Shim

Research output: Contribution to journalArticlepeer-review

Abstract

Two means to achieve high yield of individually addressable single-walled carbon nanotubes (CNTs) are developed and examined. The first approach matches the effective channel width and the density of horizontally aligned CNTs. This method can provide single CNT devices and also allows control over the average number of CNTs per channel. The second and a more deterministic approach uses self-aligned Cu-filled trenches formed in a photoresist (after Joule heating of the underlying CNT) to protect and obtain a large number of single CNT devices. Unlike electrical breakdown methods, which preserve the least conducting CNT and can leave behind CNT fragments, our approach allows the selection of the single most conducting metallic CNT from an array of as-grown CNTs with average resistance ∼14 times lower than that of as-fabricated single metallic CNTs. This method can also be used to select the best semiconducting CNT from an array and yields, on average, devices that are 15 times more conductive with 40 times higher ON/OFF ratio than those selected through electrical breakdown alone.

Original languageEnglish (US)
Pages (from-to)6500-6508
Number of pages9
JournalACS Nano
Volume8
Issue number6
DOIs
StatePublished - Jun 24 2014

Keywords

  • aligned
  • carbon nanotubes
  • electronic selection
  • individually addressable

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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