Self-aligned AlGaN/GaN high electron mobility transistors with 0.18m gate-length

Keyphrases

• Gate Length 100%
• Self-aligned 100%
• Ohmic Contact 100%
• AlGaN-GaN 100%
• GaN HEMT 100%
• Drain Bias 100%
• Ohmic 50%
• Annealing Temperature 50%
• Gate Bias 50%
• Extrinsic Transconductance 50%
• 6H-SiC Wafer 50%
• Drain Current Density 50%
• Unity Gain Cut-off Frequency 50%
• Knee Voltage 50%
• Access Resistance 50%
• Unilateral Power Gain 50%

Engineering

• Gate Length 100%
• Ohmic Contacts 100%
• Drain Bias 100%
• Current Drain 50%
• Annealing Temperature 50%
• Cutoff Frequency 50%
• Gate Bias 50%
• Max 50%
• Power Gain 50%
• Gain Frequency 50%

Agricultural and Biological Sciences

• Gates 100%
• Knee 25%