Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

K. L. Lear; K. D. Choquette; R. P. Schneider; S. P. Kilcoyne; K. M. Geib

doi:10.1049/el:19950125

Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

K. L. Lear, K. D. Choquette, R. P. Schneider, S. P. Kilcoyne, K. M. Geib

Research output: Contribution to journal › Article › peer-review

Abstract

Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.

Original language	English (US)
Pages (from-to)	208-209
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1049/el:19950125
State	Published - Feb 2 1995
Externally published	Yes

Keywords

Lasers
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19950125

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abstract = "Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.",

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author = "Lear, {K. L.} and Choquette, {K. D.} and Schneider, {R. P.} and Kilcoyne, {S. P.} and Geib, {K. M.}",

year = "1995",

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AU - Lear, K. L.

AU - Choquette, K. D.

AU - Schneider, R. P.

AU - Kilcoyne, S. P.

AU - Geib, K. M.

PY - 1995/2/2

Y1 - 1995/2/2

N2 - Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.

AB - Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.

KW - Lasers

KW - Vertical cavity surface emitting lasers

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JF - Electronics Letters

IS - 3

ER -

Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

Abstract

Keywords

ASJC Scopus subject areas

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