Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.
|Original language||English (US)|
|Number of pages||2|
|State||Published - Feb 2 1995|
- Vertical cavity surface emitting lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering