Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency

K. L. Lear, K. D. Choquette, R. P. Schneider, S. P. Kilcoyne, K. M. Geib

Research output: Contribution to journalArticle


Index-guided vertical cavity top-surface emitting laser diodes have been fabricated from an all epitaxial structure with conducting mirrors by selective lateral oxidation of AlGaAs. Low voltage, a 78% slope efficiency, and a 350μA threshold current in a single device combine to yield a maximum power conversion efficiency of 50% at less than a 2mA drive current. The device operates in a single mode up to 1.5 mW.

Original languageEnglish (US)
Pages (from-to)208-209
Number of pages2
JournalElectronics Letters
Issue number3
StatePublished - Feb 2 1995
Externally publishedYes



  • Lasers
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this