Selectively grown quantum well active layer in a photonic crystal optical microcavity

V. C. Elarde, Y. K. Kim, Kent D Choquette, J. J. Coleman

Research output: Contribution to journalConference article

Abstract

Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.

Original languageEnglish (US)
Article number09
Pages (from-to)86-93
Number of pages8
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5729
DOIs
StatePublished - Jul 21 2005
EventOptoelectronic Integrated Circuits VII - San Jose, CA, United States
Duration: Jan 25 2005Jan 27 2005

Keywords

  • GaAs
  • InGaAs
  • Photonic crystal
  • Quantum well
  • Selective area epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Atomic and Molecular Physics, and Optics
  • Radiology Nuclear Medicine and imaging

Fingerprint Dive into the research topics of 'Selectively grown quantum well active layer in a photonic crystal optical microcavity'. Together they form a unique fingerprint.

  • Cite this