Selectively grown quantum well active layer in a photonic crystal optical microcavity

V. C. Elarde; Y. K. Kim; Kent D Choquette; J. J. Coleman

doi:10.1117/12.589855

Selectively grown quantum well active layer in a photonic crystal optical microcavity

V. C. Elarde, Y. K. Kim, Kent D Choquette, J. J. Coleman

Research output: Contribution to journal › Conference article › peer-review

Abstract

Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.

Original language	English (US)
Article number	09
Pages (from-to)	86-93
Number of pages	8
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5729
DOIs	https://doi.org/10.1117/12.589855
State	Published - 2005
Event	Optoelectronic Integrated Circuits VII - San Jose, CA, United States Duration: Jan 25 2005 → Jan 27 2005

Keywords

GaAs
InGaAs
Photonic crystal
Quantum well
Selective area epitaxy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Biomaterials
Radiology Nuclear Medicine and imaging

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10.1117/12.589855

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title = "Selectively grown quantum well active layer in a photonic crystal optical microcavity",

abstract = "Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.",

keywords = "GaAs, InGaAs, Photonic crystal, Quantum well, Selective area epitaxy",

author = "Elarde, {V. C.} and Kim, {Y. K.} and Choquette, {Kent D} and Coleman, {J. J.}",

year = "2005",

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language = "English (US)",

volume = "5729",

pages = "86--93",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

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publisher = "SPIE",

note = "Optoelectronic Integrated Circuits VII ; Conference date: 25-01-2005 Through 27-01-2005",

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TY - JOUR

T1 - Selectively grown quantum well active layer in a photonic crystal optical microcavity

AU - Elarde, V. C.

AU - Kim, Y. K.

AU - Choquette, Kent D

AU - Coleman, J. J.

PY - 2005

Y1 - 2005

N2 - Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.

AB - Photonic crystal microcavity devices containing InGaAs active layers grown on GaAs substrates have demonstrated poor performance largely because of rapid, non-radiative recombination at the air-InGaAs interface formed during the fabrication of the photonic crystal slab. We have used selective area epitaxial regrowth of the quantum well active layer to localize it to the defect of the photonic crystal structure. The fabrication process is described and the potential application to resonant photonic crystal devices is discussed.

KW - GaAs

KW - InGaAs

KW - Photonic crystal

KW - Quantum well

KW - Selective area epitaxy

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DO - 10.1117/12.589855

M3 - Conference article

AN - SCOPUS:21844442854

SN - 1605-7422

VL - 5729

SP - 86

EP - 93

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

M1 - 09

T2 - Optoelectronic Integrated Circuits VII

Y2 - 25 January 2005 through 27 January 2005

ER -

Selectively grown quantum well active layer in a photonic crystal optical microcavity

Abstract

Keywords

ASJC Scopus subject areas

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