A selectivity study of the etching of lattice-matched InGaAs, InAIAs, and InP in citric acid/H2O2 solutions is reported. Selectivities as high as 500 and 187 are obtained for the etching of InGaAs on InP and InAIAs on InP, respectively. The selectivity for the etching of InGaAs on InAIAs varies from 25 at a citric acid/H2O2 solution ratio of 1 to a selectivity of 2.5 at a solution ratio of 10. The activation energies and the etch profiles of InGaAs and InAIAs are also reported. The implications of this selectivity variation for the fabrication of InAlAs/InGaAs/InP heterostructure field-effect transistors are discussed.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry