Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon

Hua Fang, Mehmet C. Ozturk, Edmund G. Seebauer

Research output: Contribution to journalConference articlepeer-review

Abstract

This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCl4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm-2 to 5×1015 cm-2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surface-passivation model to explain the effects.

Original languageEnglish (US)
Pages (from-to)231-236
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume514
StatePublished - Dec 1 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 15 1998Apr 16 1998

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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