Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon

Hua Fang; Mehmet C. Ozturk; Edmund G. Seebauer

doi:10.1557/proc-514-231

Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon

Hua Fang, Mehmet C. Ozturk, Edmund G. Seebauer

Research output: Contribution to journal › Conference article › peer-review

Abstract

This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi₂. The films were deposited using TiCl₄ and SiH₄ on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×10¹⁴ cm^-2 to 5×10¹⁵ cm^-2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi₂ nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surface-passivation model to explain the effects.

Original language	English (US)
Pages (from-to)	231-236
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	514
DOIs	https://doi.org/10.1557/proc-514-231
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 15 1998 → Apr 16 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-514-231

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@article{b51dfd18219f4dfdbbf37ffda9187def,

title = "Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon",

abstract = "This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCl4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm-2 to 5×1015 cm-2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surface-passivation model to explain the effects.",

author = "Hua Fang and Ozturk, {Mehmet C.} and Seebauer, {Edmund G.}",

year = "1998",

doi = "10.1557/proc-514-231",

language = "English (US)",

volume = "514",

pages = "231--236",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 15-04-1998 Through 16-04-1998",

}

TY - JOUR

T1 - Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon

AU - Fang, Hua

AU - Ozturk, Mehmet C.

AU - Seebauer, Edmund G.

PY - 1998

Y1 - 1998

N2 - This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCl4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm-2 to 5×1015 cm-2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surface-passivation model to explain the effects.

AB - This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCl4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm-2 to 5×1015 cm-2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surface-passivation model to explain the effects.

UR - http://www.scopus.com/inward/record.url?scp=0032304230&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032304230&partnerID=8YFLogxK

U2 - 10.1557/proc-514-231

DO - 10.1557/proc-514-231

M3 - Conference article

AN - SCOPUS:0032304230

SN - 0272-9172

VL - 514

SP - 231

EP - 236

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 15 April 1998 through 16 April 1998

ER -

Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon

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